Insulated Gate Bipolar Transistor (IGBT) Module

The product adopts the sixth generation trench gate+field stop technology, which is currently the leading chip design technology in China. The product has a voltage coverage of 600-4500V and a current coverage of 2-4800A. It can be compared with internationally renowned enterprise products such as Infineon and MSK, and has dozens of international universal packages such as 62mm. Widely used in rail transit, new energy vehicles, electromagnetic catapults UPS、 High power transmission in the power grid, motor drive, etc

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