Radiation resistant field-effect transistor

Anti radiation power field-effect transistor is a device designed with anti radiation reinforcement that can output a large working current and is used for power output terminals. The product has a current range of 16-75A and a voltage range of 60-250V. It can be packaged in plastic, gold, ceramic surface mount, etc. It has the characteristics of high input impedance, fast switching speed, wide operating frequency range, low power dissipation, and low noise. Mainly used in uninterruptible power supplies, inverters, and various power supply systems.

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