Silicon carbide field-effect transistor is a field-effect transistor product manufactured using the third-generation semiconductor material silicon carbide as the substrate. Thanks to the excellent material properties of the silicon carbide substrate, the product has performance beyond silicon-based products:
Voltage: 600~1700V
Current: 2~200A
On resistance: as low as 20m Ω
The product fully utilizes the high breakdown field strength, high thermal conductivity, and wider bandgap of silicon carbide materials, making it applicable in power management systems that require high voltage and high temperature resistance, such as switches, amplifiers, DC/DC circuits, DC/AC circuits, surge suppression, and motor drives.